support of public and industrial
research using ion beam technology

Ion Beam Lithography

Technique
Ion microbeam facilty
Ion microbeam facilty

Ion beams

The major development of ion technologies is mainly directed towards applications, using tools which are already well-developed. Fine-focus ion beams for materials modification (so-called FIB devices) are routinely applied down to beam diameters of a few nm in nanotechnology (in particular in ICT), e.g. for prototyping and repair of nanostructures by direct writing, cutting out nanoscale samples for process diagnostics, and ion lithography. MeV ion beams with focal diameters down to several 10 nm are restricted in their analytical capabilities, as their intensities become prohibitively low, and the ion-induced deterioration of the sample spot becomes increasingly critical. However they can be used for ion transmission microscopy, and testing the topology and the radiation hardness of microelectronic circuits (so-called IBIC measurements).

Nanobeam of CNRS
Nanobeam of CNRS

Proton beam lithography

JSI was among the first groups in Europe to enter this field and successfully established the PBW system in 2004. Proton beam lithography is regularly performed for deep micro-structuring of photosensitive materials. Access will be provided also for writing with other types of ion beams (B, C) for mask-less patterned material modification and patterned implantation.

Among the current applications at the JSI tandetron, biomedical research is at present one of the most prominent. PIXE lateral scan of the buckwheat grain cut reveals the elemental distribution of prominent elements in plant physiology (S, K, P, Mg) and microelements (Zn). Elemental concentrations of essential nutrition elements are in seed husk in general one order of magnitude higher and in cotyledon two orders of magnitude higher than those in endosperm. Taken at JSI with 2 MeV proton microbeam over a time of 18 hours. The work is done in collaboration with Biotechnical faculty of University of Ljubljana.

Irradiation by scanned (in line) 6 MeV C3+ ion microbeam Annealing – graphitisation of damaged channels
Irradiation by scanned (in line) 6 MeV C3+ ion microbeam annealing – graphitisation of damaged channels

Proton Beam Writing (PBW)

Proton Beam Writing (PBW) instrumentation is incorporated at the JSI microbeam facility. Focused high energy proton beam is directed on the photoresist material according to digital pattern fed in PBW controlling software. The PBW system developed at JSI enables the production of large series of equal microstructures. Three-dimensional structures are produced by application of two sequential irradiations with different energy.

Ion Beam Lithography
Ion Beam Lithography
Ion Beam Lithography
Ion Beam Lithography