Ion Implantation
Method
SPIRIT offers basic and application oriented investigations on surface modification and functionalization using ion implantation. A broad variety of surface properties is adjusted and improved, such as for tribology and chemical stability, biocompatibility, and electronic and optical applications.
Typical devices are available:
- ion implanters (40 kV, 200 kV - high current, 500 kV)
- devices for plasma-based ion implantation (200-liter chamber, metal PBII)
- fine-focused ion beam (FIB)
- Speciality: Simultaneaous Double Implantation target station combining 3 MV Tandetron and 500 kV implanter
Beamline ion implantation of materials
- 20 to 200 keV ion implantation with electrostatic scan, current limit < 0.5 mA, standard target station or high temperature target chamber (1100 °C)
- 20 to 200 keV high current ion implantation with 30 cm magnetic scan, current limit < 10 mA, target manipulator
for large and heavy samples - 500 keV ion implantation with different ion sources and beamlines, target temperature 100 K to 900 K
- Beam current: > 100 pA
- low energy high current ion implantation 500 eV to 40 keV, max. target diameter: 150 mm
- high energy ion implantation (6 MV Tandetron, 14 MV Tandem, cyclotron up to 1MeV/A), 15 x 15 cm2 scan field, target temperature 80 K to 900 K
- Ion implantation (< 30 keV) experiments with focused ion beam apparatus (15 nm spot size), liquid metal ion
source, computer controlled writing beam, ExB mass filter for alloy sources
In principle all chemical elements (can be implanted (radioactive isotopes included). Substrate materials include metals, alloys, semiconductors, ceramics and polymers.
Most frequently provided ions are
Ag, Al, Ar, As, B, Be, C, Ca, Cl, Co, Cu, F, Fe, Ge, H, He, K, Li, Mg, Mn, N, Na, Ni, O, P, RE, S, Si, Sb, Ti, V, Y, Zn
